Invention Grant
US08828806B2 Dam composition for use with multilayer semiconductor package underfill material, and fabrication of multilayer semiconductor package using the same
有权
用于多层半导体封装底层填充材料的水泥组合物，以及使用该组合物的多层半导体封装的制造
- Patent Title: Dam composition for use with multilayer semiconductor package underfill material, and fabrication of multilayer semiconductor package using the same
- Patent Title (中): 用于多层半导体封装底层填充材料的水泥组合物，以及使用该组合物的多层半导体封装的制造
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Application No.: US12789996Application Date: 2010-05-28
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Publication No.: US08828806B2Publication Date: 2014-09-09
- Inventor: Kazuaki Sumita
- Applicant: Kazuaki Sumita
- Applicant Address: JP Tokyo
- Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP2009-132009 20090601
- Main IPC: H01L21/00
- IPC: H01L21/00 ; C08G59/50 ; C08K3/00 ; C08L63/00 ; H01L23/29 ; H01L21/56 ; C08K9/06 ; C08K5/00 ; C08K5/1515 ; C08K5/5435
Abstract:
A composition comprising (A) an epoxy resin, (B) a curing agent, (C) an inorganic filler having an average particle size of 0.1-10 μm and a maximum particle size of up to 75 μm, and (D) a surface-silylated silica having an average particle size of 0.005 μm to less than 0.1 μm is suited as a dam composition for use with a underfill material in the fabrication of multilayer semiconductor packages.
Public/Granted literature
Information query
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