Invention Grant
US08828809B2 Multi-drain semiconductor power device and edge-termination structure thereof 有权
多漏极半导体功率器件及其边沿端接结构

Multi-drain semiconductor power device and edge-termination structure thereof
Abstract:
An embodiment of a semiconductor power device provided with: a structural body made of semiconductor material with a first conductivity, having an active area housing one or more elementary electronic components and an edge area delimiting externally the active area; and charge-balance structures, constituted by regions doped with a second conductivity opposite to the first conductivity, extending through the structural body both in the active area and in the edge area in order to create a substantial charge balance. The charge-balance structures are columnar walls extending in strips parallel to one another, without any mutual intersections, in the active area and in the edge area.
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