Invention Grant
- Patent Title: Multi-drain semiconductor power device and edge-termination structure thereof
- Patent Title (中): 多漏极半导体功率器件及其边沿端接结构
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Application No.: US13887066Application Date: 2013-05-03
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Publication No.: US08828809B2Publication Date: 2014-09-09
- Inventor: Mario Giuseppe Saggio , Alfio Guarnera
- Applicant: STMicroelectronics S.r.l.
- Applicant Address: IT Agrate Brianza (MB)
- Assignee: STMicroelectronics S.r.l.
- Current Assignee: STMicroelectronics S.r.l.
- Current Assignee Address: IT Agrate Brianza (MB)
- Agency: Wolf, Greenfield & Sacks, P.C.
- Priority: ITTO2008A0999 20081229
- Main IPC: H01L21/332
- IPC: H01L21/332 ; H01L21/761 ; H01L29/78 ; H01L29/06

Abstract:
An embodiment of a semiconductor power device provided with: a structural body made of semiconductor material with a first conductivity, having an active area housing one or more elementary electronic components and an edge area delimiting externally the active area; and charge-balance structures, constituted by regions doped with a second conductivity opposite to the first conductivity, extending through the structural body both in the active area and in the edge area in order to create a substantial charge balance. The charge-balance structures are columnar walls extending in strips parallel to one another, without any mutual intersections, in the active area and in the edge area.
Public/Granted literature
- US20130244397A1 MULTI-DRAIN SEMICONDUCTOR POWER DEVICE AND EDGE-TERMINATION STRUCTURE THEREOF Public/Granted day:2013-09-19
Information query
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