Invention Grant
- Patent Title: Strained structure of semiconductor device
- Patent Title (中): 半导体器件的应变结构
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Application No.: US13905266Application Date: 2013-05-30
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Publication No.: US08828832B2Publication Date: 2014-09-09
- Inventor: Ming-Huan Tsai , Han-Ting Tsai
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/8238 ; H01L29/66 ; H01L29/78 ; H01L27/092 ; H01L21/8234 ; H01L29/165
Abstract:
The present disclosure provides a semiconductor device that includes a semiconductor substrate, a gate structure disposed on a surface of the substrate, and strained structures disposed in the substrate at either side of the gate structure and formed of a semiconductor material different from the semiconductor substrate. Each strained structure has a cross-sectional profile that includes a first portion that extends from the surface of substrate and a second portion that tapers from the first portion at an angle ranging from about 50° to about 70°. The angle is measured with respect to an axis parallel to the surface of the substrate.
Public/Granted literature
- US20130260519A1 STRAINED STRUCTURE OF SEMICONDUCTOR DEVICE Public/Granted day:2013-10-03
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