Invention Grant
- Patent Title: Method for fabricating a DRAM capacitor
- Patent Title (中): 制造DRAM电容器的方法
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Application No.: US13153626Application Date: 2011-06-06
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Publication No.: US08828836B2Publication Date: 2014-09-09
- Inventor: Karthik Ramani , Hiroyuki Ode , Sandra Malhotra
- Applicant: Karthik Ramani , Hiroyuki Ode , Sandra Malhotra
- Applicant Address: US CA San Jose JP Tokyo
- Assignee: Intermolecular, Inc.,Elpida Memory, Inc.
- Current Assignee: Intermolecular, Inc.,Elpida Memory, Inc.
- Current Assignee Address: US CA San Jose JP Tokyo
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L49/02 ; H01L29/92
Abstract:
A method for fabricating a dynamic random access memory (DRAM) capacitor stack is disclosed wherein the stack includes a first electrode, a dielectric layer, and a second electrode. The first electrode is formed from a conductive binary metal. A dielectric layer is formed over the first electrode. The dielectric layer is subjected to a milliseconds anneal process that serves to crystallize the dielectric material and decrease the concentration of oxygen vacancies.
Public/Granted literature
- US20120309160A1 METHOD FOR FABRICATING A DRAM CAPACITOR Public/Granted day:2012-12-06
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