Invention Grant
- Patent Title: Semiconductor device and method of manufacture
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Application No.: US14153854Application Date: 2014-01-13
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Publication No.: US08828841B2Publication Date: 2014-09-09
- Inventor: Chih-Tang Peng , Bing-Hung Chen , Tze-Liang Lee , Hao-Ming Lien
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater and Matsil, L.L.P.
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/768 ; H01L21/285

Abstract:
A system and method for forming an isolation trench is provided. An embodiment comprises forming a trench and then lining the trench with a dielectric liner. Prior to etching the dielectric liner, an outgassing process is utilized to remove any residual precursor material that may be left over from the deposition of the dielectric liner. After the outgassing process, the dielectric liner may be etched, and the trench may be filled with a dielectric material.
Public/Granted literature
- US20140127879A1 Semiconductor Device and Method of Manufacture Public/Granted day:2014-05-08
Information query
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