Invention Grant
- Patent Title: Crack stop structure and method for forming the same
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Application No.: US14172919Application Date: 2014-02-05
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Publication No.: US08828842B2Publication Date: 2014-09-09
- Inventor: Tse-Yao Huang , Yi-Nan Chen , Hsien-Wen Liu
- Applicant: Nanya Technology Corp.
- Applicant Address: TW Kueishan, Tao-Yuan Hsien
- Assignee: Nanya Technology Corp.
- Current Assignee: Nanya Technology Corp.
- Current Assignee Address: TW Kueishan, Tao-Yuan Hsien
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L23/00 ; H01L23/58
Abstract:
The present invention in a first aspect proposes a semiconductor structure with a crack stop structure. The semiconductor structure includes a matrix, an integrated circuit and a scribe line. The matrix includes a scribe line region and a circuit region. The integrated circuit is disposed within the circuit region. The scribe line is disposed within the scribe line region and includes a crack stop trench which is disposed in the matrix and adjacent to the circuit region. The crack stop trench is parallel with one side of the circuit region and filled with a composite material in the form of a grid to form a crack stop structure.
Public/Granted literature
- US20140154864A1 CRACK STOP STRUCTURE AND METHOD FOR FORMING THE SAME Public/Granted day:2014-06-05
Information query
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