Method of manufacturing isolation structure

Invention Grant

US08828843B2 Method of manufacturing isolation structure 有权

Title translation: 制造隔离结构的方法

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Patent Title: Method of manufacturing isolation structure
Patent Title (中): 制造隔离结构的方法
Application No.: US13875442

Application Date: 2013-05-02
Publication No.: US08828843B2

Publication Date: 2014-09-09
Inventor: Yaw-Wen Hu , Jung-Chang Hsieh , Kuen-Shin Huang , Jian-Wei Chen , Ming-Tai Chien
Applicant: Inotera Memories, Inc.
Applicant Address: TW Taoyuan County
Assignee: Inotera Memories, Inc.
Current Assignee: Inotera Memories, Inc.
Current Assignee Address: TW Taoyuan County
Agency: Rosenberg, Klein & Lee
Priority: TW102104579A 20130206
Main IPC: H01L21/4763
IPC: H01L21/4763 ; H01L21/762

Method of manufacturing isolation structure

Abstract:

A method of manufacturing an isolation structure includes forming a laminate structure on a substrate. A plurality trenches is formed in the laminate structure. Subsequently a pre-processing is effected to form a hydrophilic thin film having oxygen ions on the inner wall of the trenches. Spin-on-dielectric (SOD) materials are filled into the trenches. The hydrophilic think film having oxygen ions changes the surface tension of the inner wall of the trenches and increases SOD material fluidity.

Abstract(Chinese):

隔离结构的制造方法包括在基板上形成层叠结构。在层叠结构中形成多个沟槽。随后进行预处理以在沟槽的内壁上形成具有氧离子的亲水性薄膜。旋转电介质（SOD）材料被填充到沟槽中。具有氧离子的亲水认知膜改变了沟槽内壁的表面张力，提高了SOD材料的流动性。

Public/Granted literature

US20140220762A1 METHOD OF MANUFACTURING ISOLATION STRUCTURE Public/Granted day:2014-08-07

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）