Invention Grant
- Patent Title: Laser beam processing method for a wafer
- Patent Title (中): 晶圆的激光束处理方法
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Application No.: US13483957Application Date: 2012-05-30
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Publication No.: US08828847B2Publication Date: 2014-09-09
- Inventor: Tomohiro Endo
- Applicant: Tomohiro Endo
- Applicant Address: JP Tokyo
- Assignee: Disco Corporation
- Current Assignee: Disco Corporation
- Current Assignee Address: JP Tokyo
- Agency: Greer Burns & Crain Ltd.
- Priority: JP2011-123533 20110601
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L21/46

Abstract:
A processing method for a wafer which has, on a surface thereof, a device region in which a plurality of devices are formed and partitioned by division lines and an outer periphery excess region surrounding the device region, includes a dividing groove formation step of irradiating a laser beam of a wavelength having absorbability by a wafer along the division lines to form dividing grooves serving as start points of cutting, and a dividing step of applying external force to the wafer on which the dividing grooves are formed to cut the wafer into the individual devices. At the dividing groove formation step, the dividing grooves are formed along the division lines in the device region while a non-processed region is left in the outer periphery excess region on extension lines of the division lines.
Public/Granted literature
- US20120309168A1 LASER BEAM PROCESSING METHOD FOR A WAFER Public/Granted day:2012-12-06
Information query
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