Invention Grant
US08828852B2 Delta-doping at wafer level for high throughput, high yield fabrication of silicon imaging arrays
有权
在晶圆级别进行增量掺杂，以实现高成本，高成本的硅成像阵列制造
- Patent Title: Delta-doping at wafer level for high throughput, high yield fabrication of silicon imaging arrays
- Patent Title (中): 在晶圆级别进行增量掺杂，以实现高成本，高成本的硅成像阵列制造
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Application No.: US12965790Application Date: 2010-12-10
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Publication No.: US08828852B2Publication Date: 2014-09-09
- Inventor: Michael E. Hoenk , Shoulch Nikzad , Todd J. Jones , Frank Greer , Alexander G. Carver
- Applicant: Michael E. Hoenk , Shoulch Nikzad , Todd J. Jones , Frank Greer , Alexander G. Carver
- Applicant Address: US CA Pasadena
- Assignee: California Institute of Technology
- Current Assignee: California Institute of Technology
- Current Assignee Address: US CA Pasadena
- Agency: Milstein Zhang & Wu LLC
- Agent Joseph B. Milstein
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36
Abstract:
Systems and methods for producing high quantum efficiency silicon devices. A silicon MBE has a preparation chamber that provides for cleaning silicon surfaces using an oxygen plasma to remove impurities and a gaseous (dry) NH3+NF3 room temperature oxide removal process that leaves the silicon surface hydrogen terminated. Silicon wafers up to 8 inches in diameter have devices that can be fabricated using the cleaning procedures and MBE processing, including delta doping.
Public/Granted literature
- US20110140246A1 DELTA-DOPING AT WAFER LEVEL FOR HIGH THROUGHPUT, HIGH YIELD FABRICATION OF SILICON IMAGING ARRAYS Public/Granted day:2011-06-16
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