Invention Grant
- Patent Title: Transistor performance using a two-step damage anneal
- Patent Title (中): 晶体管性能使用两步损伤退火
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Application No.: US11742229Application Date: 2007-04-30
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Publication No.: US08828855B2Publication Date: 2014-09-09
- Inventor: Hiroaki Niimi , Jarvis Benjamin Jacobs , Ajith Varghese
- Applicant: Hiroaki Niimi , Jarvis Benjamin Jacobs , Ajith Varghese
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Frederick J. Telecky, Jr.
- Main IPC: H01L21/425
- IPC: H01L21/425 ; H01L21/265 ; H01L21/8234 ; H01L21/324 ; H01L29/10
Abstract:
A two-step thermal treatment method consists of performing ion implantation in a silicon substrate of the semiconductor device. A first thermal treatment procedure is performed on the semiconductor device. A second thermal treatment procedure is consecutively performed on the semiconductor device to reduce damage produced by the ion implantation.
Public/Granted literature
- US20080268627A1 TRANSISTOR PERFORMANCE USING A TWO-STEP DAMAGE ANNEAL Public/Granted day:2008-10-30
Information query
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