Invention Grant
- Patent Title: Method for forming semiconductor film and method for manufacturing semiconductor device
- Patent Title (中): 半导体膜形成方法及半导体装置的制造方法
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Application No.: US13368379Application Date: 2012-02-08
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Publication No.: US08828859B2Publication Date: 2014-09-09
- Inventor: Tetsuhiro Tanaka , Ryo Tokumaru , Takashi Ohtsuki , Ryota Tajima , Erika Kato
- Applicant: Tetsuhiro Tanaka , Ryo Tokumaru , Takashi Ohtsuki , Ryota Tajima , Erika Kato
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2011-027964 20110211
- Main IPC: H01L21/3205
- IPC: H01L21/3205 ; H01L29/66 ; H01L29/04 ; H01L21/02 ; H01L29/786
Abstract:
A microcrystalline semiconductor film is formed over a substrate using a plasma CVD apparatus which includes a reaction chamber in such a manner that a deposition gas and hydrogen are supplied to the reaction chamber in which the substrate is set between a first electrode and a second electrode; and plasma is generated in the reaction chamber by supplying high-frequency power to the first electrode. Note that the plasma density in a region overlapping with an end portion of the substrate in a region where the plasma is generated is set to be higher than that in a region which is positioned more on the inside than the region overlapping with the end portion of the substrate, so that the microcrystalline semiconductor film is formed over a region which is positioned more on the inside than the end portion of the substrate.
Public/Granted literature
- US20120208360A1 METHOD FOR FORMING SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2012-08-16
Information query
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