System and method for manufacturing contact. According to an embodiment, the present invention provides a method for manufacturing integrated circuits. The method includes a step for providing a semiconductor substrate. The method also includes a step for defining a plurality of contact regions on the semiconductor substrate. The method further includes a step for forming a plurality of dielectric structures on the plurality of contact regions. Additionally, the method includes a step for forming a plurality of openings on the semiconductor substrate. For example, each of the openings is characterized by at least a depth, a width, and an aspect ratio. Furthermore, the method includes a step for performing deposition within the openings using a first type of material, which includes a titanium material. The method additionally includes a step for performing annealing at a predetermined set of conditions.