Invention Grant
- Patent Title: Method for manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US13388626Application Date: 2011-07-19
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Publication No.: US08828873B2Publication Date: 2014-09-09
- Inventor: Hideki Shimoi , Keisuke Araki
- Applicant: Hideki Shimoi , Keisuke Araki
- Applicant Address: JP Hamamatsu-shi, Shizuoka
- Assignee: Hamamatsu Photonics K.K.
- Current Assignee: Hamamatsu Photonics K.K.
- Current Assignee Address: JP Hamamatsu-shi, Shizuoka
- Agency: Drinker Biddle & Reath LLP
- Priority: JP2010-167396 20100726
- International Application: PCT/JP2011/066347 WO 20110719
- International Announcement: WO2012/014717 WO 20120202
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L23/473 ; B23K26/06 ; B23K26/00 ; B23K26/08

Abstract:
A method for manufacturing a semiconductor device having a cooling mechanism comprises a modified region forming step of converging a laser light at a sheet-like object to be processed made of silicon so as to form a modified region within the object along a line to form a modified region, an etching step of anisotropically etching the object after the modified region forming step so as to advance the etching selectively along the first modified region and form a flow path for circulating a coolant as a cooling mechanism within the object, and a functional device forming step of forming a functional device on one main face side of the object.
Public/Granted literature
- US20120135602A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2012-05-31
Information query
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