Invention Grant
- Patent Title: Chemical mechanical polishing of group III-nitride surfaces
- Patent Title (中): III族氮化物表面的化学机械抛光
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Application No.: US13073582Application Date: 2011-03-28
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Publication No.: US08828874B2Publication Date: 2014-09-09
- Inventor: Rajiv K. Singh , Arul Chakkaravarthi Arjunan , Deepika Singh , Abhudaya Mishra
- Applicant: Rajiv K. Singh , Arul Chakkaravarthi Arjunan , Deepika Singh , Abhudaya Mishra
- Applicant Address: US FL Gainesville US FL Gainesville
- Assignee: Sinmat, Inc.,University of Florida Research Foundation, Inc.
- Current Assignee: Sinmat, Inc.,University of Florida Research Foundation, Inc.
- Current Assignee Address: US FL Gainesville US FL Gainesville
- Agency: Jetter & Associates, P.A.
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461 ; C09G1/02 ; C09K3/14 ; H01L21/02
Abstract:
A method of chemically-mechanically polishing a substrate having a Group III-nitride surface includes providing a chemical-mechanical polishing slurry composition. The slurry composition includes a slurry solution including a liquid carrier and an oxidizer including a transition metal or a per-based compound. The slurry solution includes at least one component that reacts with the Group III-nitride surface to form a softened Group III-nitride surface. The Group III-nitride comprising surface is contacted with the slurry composition by a pad to form the softened Group III-nitride surface. The pad is moved relative to the softened Group III-nitride surface, wherein at least a portion of the softened Group III-nitride surface is removed.
Public/Granted literature
- US20120252213A1 CHEMICAL MECHANICAL POLISHING OF GROUP III-NITRIDE SURFACES Public/Granted day:2012-10-04
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