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Invention Grant
US08828877B2 Etching solution and trench isolation structure-formation process employing the same 有权
蚀刻溶液和沟槽隔离结构形成工艺采用相同的方法

  • Patent Title: Etching solution and trench isolation structure-formation process employing the same
  • Patent Title (中): 蚀刻溶液和沟槽隔离结构形成工艺采用相同的方法
  • Application No.: US13320833
    Application Date: 2010-05-24
  • Publication No.: US08828877B2
    Publication Date: 2014-09-09
  • Inventor: Issei Sakurai
  • Applicant: Issei Sakurai
  • Applicant Address: US NJ Somerville
  • Assignee: AZ Electronic Materials USA Corp.
  • Current Assignee: AZ Electronic Materials USA Corp.
  • Current Assignee Address: US NJ Somerville
  • Agent Sangya Jain
  • Priority: JP2009-125539 20090525; JP2009-255960 20091109
  • International Application: PCT/JP2010/058711 WO 20100524
  • International Announcement: WO2010/137544 WO 20101202
  • Main IPC: H01L21/311
  • IPC: H01L21/311 ;  H01L21/762 ;  H01L21/02
Etching solution and trench isolation structure-formation process employing the same
Abstract:
The present invention provides an etching solution less affected by trench structures and also provides an isolation structure-formation process employing the solution. The etching solution contains hydrofluoric acid and an organic solvent. The organic solvent has a δH value defined by Hansen solubility parameters in the range of 4 to 12 inclusive and the saturation solubility thereof in water is 5 wt % or more at 20° C. This solution can be adopted instead of known etching solutions used in conventional production processes of semiconductor elements.
Abstract(Chinese):

本发明提供了一种不受沟槽结构影响的蚀刻溶液，并且还提供了采用该溶液的隔离结构形成方法。 蚀刻溶液含有氢氟酸和有机溶剂。 有机溶剂具有由Hansen溶解度参数定义的δH值在4〜12的范围内，其在水中的饱和溶解度在20℃下为5重量％以上。该溶液可以代替已知的用于 半导体元件的常规生产工艺。

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IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02 .半导体器件或其部件的制造或处理
H01L21/04 ..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18 ...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30 ....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31 .....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105 ......后处理
H01L21/311 .......绝缘层的刻蚀
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