Invention Grant
- Patent Title: Back contact buffer layer for thin-film solar cells
- Patent Title (中): 用于薄膜太阳能电池的背面接触缓冲层
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Application No.: US13515686Application Date: 2010-10-19
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Publication No.: US08829342B2Publication Date: 2014-09-09
- Inventor: Alvin D. Compaan , Victor V. Plotnikov
- Applicant: Alvin D. Compaan , Victor V. Plotnikov
- Applicant Address: US OH Toledo
- Assignee: The University of Toledo
- Current Assignee: The University of Toledo
- Current Assignee Address: US OH Toledo
- Agency: MacMillan, Sobanski & Todd, LLC
- International Application: PCT/US2010/053167 WO 20101019
- International Announcement: WO2011/049933 WO 20110428
- Main IPC: H01L31/0296
- IPC: H01L31/0296 ; H01L31/18 ; H01L31/073 ; H01L31/0224 ; H01L31/075 ; H01L31/0216

Abstract:
A photovoltaic cell structure is disclosed that includes a buffer/passivation layer at a CdTe/Back contact interface. The buffer/passivation layer is formed from the same material that forms the n-type semiconductor active layer. In one embodiment, the buffer layer and the n-type semiconductor active layer are formed from cadmium sulfide (CdS). A method of forming a photovoltaic cell includes the step of forming the semiconductor active layers and the buffer/passivation layer within the same deposition chamber and using the same material source.
Public/Granted literature
- US20130174895A1 Back Contact Buffer Layer for Thin-Film Solar Cells Public/Granted day:2013-07-11
Information query
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