Invention Grant
- Patent Title: Optoelectronic device having an embedded electrode
- Patent Title (中): 具有嵌入电极的光电器件
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Application No.: US13699954Application Date: 2011-05-24
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Publication No.: US08829506B2Publication Date: 2014-09-09
- Inventor: Jean-Yves Laurent , Jean-Marie Verilhac
- Applicant: Jean-Yves Laurent , Jean-Marie Verilhac
- Applicant Address: FR Paris
- Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
- Current Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
- Current Assignee Address: FR Paris
- Agency: Oliff PLC
- Priority: FR1002271 20100528
- International Application: PCT/FR2011/000311 WO 20110524
- International Announcement: WO2011/148064 WO 20111201
- Main IPC: H01L35/24
- IPC: H01L35/24 ; H01L51/42 ; H01L51/44 ; H01L51/50 ; H01L51/52

Abstract:
An optoelectronic device including a first electrode arranged on a substrate, a second electrode that includes a first surface facing the first electrode, and a semiconductor material layer that is in electric contact with the first and second electrodes. The second electrode includes a side wall that is adjacent to the first surface and is covered with the semiconductor material layer by the insertion of a self-assembled monolayer.
Public/Granted literature
- US20130069050A1 OPTOELECTRONIC DEVICE HAVING AN EMBEDDED ELECTRODE Public/Granted day:2013-03-21
Information query
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