Invention Grant
US08829511B2 Hybrid thin film transistor, manufacturing method thereof and display panel having the same
有权
混合薄膜晶体管，其制造方法和具有该混合薄膜晶体管的显示面板
- Patent Title: Hybrid thin film transistor, manufacturing method thereof and display panel having the same
- Patent Title (中): 混合薄膜晶体管，其制造方法和具有该混合薄膜晶体管的显示面板
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Application No.: US13234119Application Date: 2011-09-15
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Publication No.: US08829511B2Publication Date: 2014-09-09
- Inventor: Hsiu-Chun Hsieh , Yi-Wei Chen , Ta-Wei Chiu , Chung-Tao Chen
- Applicant: Hsiu-Chun Hsieh , Yi-Wei Chen , Ta-Wei Chiu , Chung-Tao Chen
- Applicant Address: TW Hsinchu
- Assignee: Au Optronics Corporation
- Current Assignee: Au Optronics Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW100119405A 20110602
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/12
Abstract:
A hybrid thin film transistor includes a first thin film transistor and a second thin film transistor. The first thin film transistor includes a first gate, a first source, a first drain and a first semiconductor layer disposed between the first gate, the first source and the first drain, and the first semiconductor layer includes a crystallized silicon layer. The second thin film transistor includes a second gate, a second source, a second drain and a second semiconductor layer disposed between the second gate, the second source and the second drain, and the second semiconductor layer includes a metal oxide semiconductor layer.
Public/Granted literature
- US20120305910A1 HYBRID THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF AND DISPLAY PANEL HAVING THE SAME Public/Granted day:2012-12-06
Information query
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