Invention Grant
- Patent Title: Thin film transistor and method for manufacturing the same
- Patent Title (中): 薄膜晶体管及其制造方法
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Application No.: US13711540Application Date: 2012-12-11
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Publication No.: US08829514B2Publication Date: 2014-09-09
- Inventor: Hsiao-Wen Zan , Chuang-Chuang Tsai , Chun-Hung Liao , Wei-Tsung Chen
- Applicant: E Ink Holdings Inc.
- Applicant Address: TW Hsinchu
- Assignee: E Ink Holdings Inc.
- Current Assignee: E Ink Holdings Inc.
- Current Assignee Address: TW Hsinchu
- Agency: CKC & Partners Co., Ltd.
- Priority: TW101121927A 20120619; TW101139494A 20121025
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66
Abstract:
Disclosed herein is a thin film transistor, which includes a metal oxide semiconductor layer, an insulating layer, a gate electrode, a source electrode and a drain electrode. The metal oxide semiconductor layer includes a channel region having at least one first region and a second region. The first region has an oxygen vacancy concentration greater than an oxygen vacancy concentration of the second region. The second region surrounds the first region. A method for manufacturing the thin film transistor is disclosed as well.
Public/Granted literature
- US20130153891A1 THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2013-06-20
Information query
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