Invention Grant
- Patent Title: Silicon carbide semiconductor device
- Patent Title (中): 碳化硅半导体器件
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Application No.: US12450708Application Date: 2008-04-10
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Publication No.: US08829533B2Publication Date: 2014-09-09
- Inventor: Martin Domeij
- Applicant: Martin Domeij
- Applicant Address: US CA San Jose
- Assignee: Fairchild Semiconductor Corporation
- Current Assignee: Fairchild Semiconductor Corporation
- Current Assignee Address: US CA San Jose
- Priority: SE0700896 20070411
- International Application: PCT/SE2008/050408 WO 20080410
- International Announcement: WO2008/127186 WO 20081023
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L29/36 ; H01L29/73 ; H01L29/66 ; H01L29/868 ; H01L29/08 ; H01L29/06 ; H01L29/16
Abstract:
The present invention relates to a semiconductor device (1) in silicon carbide, with a highly doped substrate region (11) and a drift region (12). The present invention specifically teaches that an additional layer (13) is positioned between the highly doped substrate region (11) and the drift region (12), the additional layer (13) thus providing a wide safe operating area at subsequently high voltages and current densities.
Public/Granted literature
- US20100117097A1 SILICON CARBIDE SEMICONDUCTOR DEVICE Public/Granted day:2010-05-13
Information query
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