Invention Grant
- Patent Title: Silicon carbide semiconductor device
- Patent Title (中): 碳化硅半导体器件
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Application No.: US13722486Application Date: 2012-12-20
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Publication No.: US08829535B2Publication Date: 2014-09-09
- Inventor: Mitsuru Shimazu , Toru Hiyoshi , Keiji Wada , Takeyoshi Masuda
- Applicant: Sumitomo Electric Industries, Ltd.
- Applicant Address: JP Osaka-shi
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka-shi
- Agency: Venable LLP
- Agent Michael A. Sartori; George L. Howarah
- Priority: JP2012-036988 20120223
- Main IPC: H01L29/16
- IPC: H01L29/16 ; H01L21/20
Abstract:
A silicon carbide semiconductor device includes an insulation film, and a silicon carbide layer having a surface covered with the insulation film. The surface includes a first region. The first region has a first plane orientation at least partially. The first plane orientation is any of a (0-33-8) plane, (30-3-8) plane, (-330-8) plane, (03-3-8) plane, (-303-8) plane, and (3-30-8) plane.
Public/Granted literature
- US20130193447A1 SILICON CARBIDE SEMICONDUCTOR DEVICE Public/Granted day:2013-08-01
Information query
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