Invention Grant
- Patent Title: SiC semiconductor device and manufacturing method thereof
- Patent Title (中): SiC半导体器件及其制造方法
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Application No.: US13795316Application Date: 2013-03-12
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Publication No.: US08829536B2Publication Date: 2014-09-09
- Inventor: Tatsuo Shimizu , Tetsuo Hatakeyama
- Applicant: Natl. Inst. of Advanced Indust. Science and Tech
- Applicant Address: JP Chiyoda-ku
- Assignee: National Institute of Advanced Industrial Science and Technology
- Current Assignee: National Institute of Advanced Industrial Science and Technology
- Current Assignee Address: JP Chiyoda-ku
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2012-060362 20120316
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/04
Abstract:
According to one embodiment, an SiC semiconductor device including a p-type 4H—SiC region formed on at least part of a surface portion of an SiC substrate, a first gate insulating film formed on the 4H—SiC region and formed of a 3C—SiC thin film having p-type dopant introduced therein, a second gate insulating film formed on the first gate insulating film, and a gate electrode formed on the second gate insulating film.
Public/Granted literature
- US20130240906A1 SIC SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2013-09-19
Information query
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