Invention Grant
- Patent Title: Group III nitride semiconductor light-emitting device
- Patent Title (中): III族氮化物半导体发光器件
-
Application No.: US12119015Application Date: 2008-05-12
-
Publication No.: US08829545B2Publication Date: 2014-09-09
- Inventor: Masaki Ueno , Takashi Kyono , Yusuke Yoshizumi
- Applicant: Masaki Ueno , Takashi Kyono , Yusuke Yoshizumi
- Applicant Address: JP Osaka-shi, Osaka
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka-shi, Osaka
- Agency: Drinker Biddle & Reath LLP
- Priority: JPP2007-164060 20070621
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
A group III nitride semiconductor light-emitting device comprises an n-type gallium nitride-based semiconductor layer, a first p-type AlXGa1-XN (0≦X
Public/Granted literature
- US20080315243A1 GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE Public/Granted day:2008-12-25
Information query
IPC分类: