Invention Grant
US08829559B2 Nitride semiconductor light-emitting device and production method thereof 有权
氮化物半导体发光器件及其制造方法

Nitride semiconductor light-emitting device and production method thereof
Abstract:
In a nitride semiconductor light-emitting device having an n-side and a p-side electrode pad formed on the same side of a substrate wherein current distribution in the light-emitting device is improved by forming branch electrodes extended from the p-side electrode pad (and the n-side electrode pad), when sheet resistance values of n-side and p-side layers in the device are low enough, contact resistance between a p-type nitride semiconductor layer and a current diffusion layer of a transparent conductive film formed thereon is reduced and in-plane distribution of the sheet resistance is made uniform whereby improving the optical output, by increasing in a prescribed condition the sheet resistance value of the current diffusion layer.
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