Invention Grant
- Patent Title: Nitride semiconductor light-emitting device and production method thereof
- Patent Title (中): 氮化物半导体发光器件及其制造方法
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Application No.: US13434204Application Date: 2012-03-29
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Publication No.: US08829559B2Publication Date: 2014-09-09
- Inventor: Yufeng Weng , Michael Brockley
- Applicant: Yufeng Weng , Michael Brockley
- Applicant Address: JP Osaka-shi
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka-shi
- Agency: Morrison & Foerster LLP
- Priority: JP2011-078250 20110331; JP2012-010938 20120123
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L29/205 ; H01L29/06 ; H01L21/00 ; H01L33/38 ; H01L33/14 ; H01L33/20

Abstract:
In a nitride semiconductor light-emitting device having an n-side and a p-side electrode pad formed on the same side of a substrate wherein current distribution in the light-emitting device is improved by forming branch electrodes extended from the p-side electrode pad (and the n-side electrode pad), when sheet resistance values of n-side and p-side layers in the device are low enough, contact resistance between a p-type nitride semiconductor layer and a current diffusion layer of a transparent conductive film formed thereon is reduced and in-plane distribution of the sheet resistance is made uniform whereby improving the optical output, by increasing in a prescribed condition the sheet resistance value of the current diffusion layer.
Public/Granted literature
- US20120248490A1 NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREOF Public/Granted day:2012-10-04
Information query
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