Invention Grant
US08829566B2 Germanium/silicon avalanche photodetector with separate absorption and multiplication regions
有权
锗/硅雪崩光电探测器，具有单独的吸收和乘法区域
- Patent Title: Germanium/silicon avalanche photodetector with separate absorption and multiplication regions
- Patent Title (中): 锗/硅雪崩光电探测器，具有单独的吸收和乘法区域
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Application No.: US11724805Application Date: 2007-03-15
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Publication No.: US08829566B2Publication Date: 2014-09-09
- Inventor: Michael T. Morse , Olufemi I. Dosunmu , Ansheng Liu , Mario J. Paniccia
- Applicant: Michael T. Morse , Olufemi I. Dosunmu , Ansheng Liu , Mario J. Paniccia
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L31/107
- IPC: H01L31/107 ; H01L31/18 ; H01L31/028 ; H01L31/0312
Abstract:
A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.
Public/Granted literature
- US20070164385A1 Germanium/silicon avalanche photodetector with separate absorption and multiplication regions Public/Granted day:2007-07-19
Information query
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