Invention Grant
- Patent Title: Metal alloy with an abrupt interface to III-V semiconductor
- Patent Title (中): 与III-V半导体突然接口的金属合金
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Application No.: US13729592Application Date: 2012-12-28
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Publication No.: US08829567B2Publication Date: 2014-09-09
- Inventor: Rinus Tek Po Lee , Tae Woo Kim , Man Hoi Wong , Richard Hill
- Applicant: Sematech, Inc.
- Applicant Address: US NY Albany
- Assignee: Sematech, Inc.
- Current Assignee: Sematech, Inc.
- Current Assignee Address: US NY Albany
- Agency: Heslin Rothenberg Farley & Mesiti P.C.
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/00 ; H01L29/205
Abstract:
Semiconductor structures having a first layer including an n-type III-V semiconductor material and a second layer including an M(InP)(InGaAs) alloy, wherein M is selected from Ni, Pt, Pd, Co, Ti, Zr, Y, Mo, Ru, Ir, Sb, In, Dy, Tb, Er, Yb, and Te, and combinations thereof, are disclosed. The semiconductor structures have a substantially planar interface between the first and second layers. Methods of fabricating semiconductor structures, and methods of reducing interface roughness and/or sheet resistance of a contact are also disclosed.
Public/Granted literature
- US20140183597A1 METAL ALLOY WITH AN ABRUPT INTERFACE TO III-V SEMICONDUCTOR Public/Granted day:2014-07-03
Information query
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