Invention Grant
- Patent Title: Switching device for heterojunction integrated circuits and methods of forming the same
- Patent Title (中): 用于异质结集成电路的开关装置及其形成方法
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Application No.: US13416152Application Date: 2012-03-09
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Publication No.: US08829570B2Publication Date: 2014-09-09
- Inventor: Srivatsan Parthasarathy , Javier A. Salcedo , Shuyun Zhang
- Applicant: Srivatsan Parthasarathy , Javier A. Salcedo , Shuyun Zhang
- Applicant Address: US MA Norwood
- Assignee: Analog Devices, Inc.
- Current Assignee: Analog Devices, Inc.
- Current Assignee Address: US MA Norwood
- Agency: Knobbe, Martens, Olson & Bear LLP
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
A switching device for heterojunction integrated circuits is disclosed. According to one aspect, the switching device is configured to protect a circuit from an electro-static discharge (ESD) event. The switching device includes a second base contact region that is configured to be electrically floating, a first base contact region and a collector contact region that are coupled to a first input terminal of the switching device, and an emitter contact region that is coupled to a second input terminal of the switching device. Due in part to capacitive coupling between the first base contact region and the second base contact region, the switching device exhibits a low transient trigger voltage and a fast response to ESD events. Further, the switching device exhibits a high DC trigger voltage (for example, greater than 20V), while maintaining relatively low leakage current during operation (for example, less than about 0.5 μA at 20V DC.
Public/Granted literature
- US20130234209A1 SWITCHING DEVICE FOR HETEROJUNCTION INTEGRATED CIRCUITS AND METHODS OF FORMING THE SAME Public/Granted day:2013-09-12
Information query
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