Invention Grant
US08829588B2 NVM bitcell with a replacement control gate and additional floating gate
有权
具有替代控制门和附加浮动栅极的NVM位单元
- Patent Title: NVM bitcell with a replacement control gate and additional floating gate
- Patent Title (中): 具有替代控制门和附加浮动栅极的NVM位单元
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Application No.: US13191223Application Date: 2011-07-26
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Publication No.: US08829588B2Publication Date: 2014-09-09
- Inventor: Andrew E. Horch
- Applicant: Andrew E. Horch
- Applicant Address: US CA Mountain View
- Assignee: Synopsys, Inc.
- Current Assignee: Synopsys, Inc.
- Current Assignee Address: US CA Mountain View
- Agency: Fenwick & West LLP
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L29/51 ; H01L21/28
Abstract:
Embodiments relate to a nonvolatile memory (“NVM”) bitcell with a replacement metal control gate and an additional floating gate. The bitcell may be created using a standard complementary metal-oxide-semiconductor manufacturing processes (“CMOS processes”) without any additional process steps, thereby reducing the cost and time associated with fabricating a semiconductor device incorporating the NVM bitcell.
Public/Granted literature
- US20130026553A1 NVM Bitcell with a Replacement Control Gate and Additional Floating Gate Public/Granted day:2013-01-31
Information query
IPC分类:
