Invention Grant
- Patent Title: Three-dimensional semiconductor memory device
- Patent Title (中): 三维半导体存储器件
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Application No.: US13757273Application Date: 2013-02-01
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Publication No.: US08829589B2Publication Date: 2014-09-09
- Inventor: Changhyun Lee , Byoungkeun Son , Youngwoo Park
- Applicant: Changhyun Lee , Byoungkeun Son , Youngwoo Park
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: F.Chau & Associates, LLC
- Priority: KR10-2010-0092000 20100917
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L29/04 ; H01L29/792
Abstract:
A three-dimensional semiconductor memory device may include gap-fill insulating layers extending upward from a substrate, an electrode structure delimited by sidewalls of the gap-fill insulating layers, vertical structures provided between adjacent ones of the gap-fill insulating layers to penetrate the electrode structure, and at least one separation pattern extending along the gap-fill insulating layers and penetrating at least a portion of the electrode structure. The separation pattern may include at least one separation semiconductor layer.
Public/Granted literature
- US20130140623A1 THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2013-06-06
Information query
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