Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13709799Application Date: 2012-12-10
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Publication No.: US08829599B2Publication Date: 2014-09-09
- Inventor: Young Soo Ahn
- Applicant: Young Soo Ahn
- Applicant Address: KR Icheon-Si, Gyeonggi-Do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Icheon-Si, Gyeonggi-Do
- Agency: Lowe, Hauptman & Ham, LLP
- Priority: KR10-2012-0064953 20120618
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L29/788 ; H01L29/66 ; H01L27/115

Abstract:
In a semiconductor memory device, a plurality of control gates is stacked in a first region and a second region of a substrate. A plurality of interlayer insulating layers is stacked in a portion of the second region of the substrate. Each interlayer insulating layer is formed at the same level as a corresponding one of the control gates. A plurality of sub-control gates is stacked in the first and second regions region of the substrate and interposed between the control gates and the interlayer insulating layers. A common node penetrates the interlayer insulating layers and the sub-control gates.
Public/Granted literature
- US20130334589A1 Semiconductor device and method of manufacturing the same Public/Granted day:2013-12-19
Information query
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