Invention Grant
- Patent Title: Power semiconductor device
- Patent Title (中): 功率半导体器件
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Application No.: US13753674Application Date: 2013-01-30
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Publication No.: US08829600B2Publication Date: 2014-09-09
- Inventor: Kenji Hatori
- Applicant: Kenji Hatori
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-142241 20100623
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/739 ; H01L29/08 ; H01L29/06 ; H01L29/36
Abstract:
Provided is a power semiconductor device including a semiconductor substrate, in which a current flows in a thickness direction of the semiconductor substrate. The semiconductor substrate includes a resistance control structure configured so that a resistance to the current becomes higher in a central portion of the semiconductor substrate than a peripheral portion of the semiconductor substrate.
Public/Granted literature
- US20130140603A1 POWER SEMICONDUCTOR DEVICE Public/Granted day:2013-06-06
Information query
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