Invention Grant
- Patent Title: Fast switching super-junction trench MOSFETs
- Patent Title (中): 快速开关超结沟槽MOSFET
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Application No.: US13950692Application Date: 2013-07-25
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Publication No.: US08829607B1Publication Date: 2014-09-09
- Inventor: Fu-Yuan Hsieh
- Applicant: Force Mos Technology Co., Ltd.
- Applicant Address: TW New Taipei TW New Taipei
- Assignee: Fu-Yuan Hsieh,Force Mos Technology Co., Ltd.
- Current Assignee: Fu-Yuan Hsieh,Force Mos Technology Co., Ltd.
- Current Assignee Address: TW New Taipei TW New Taipei
- Agency: Bacon & Thomas, PLLC
- Main IPC: H01L29/36
- IPC: H01L29/36 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119 ; H01L29/78
Abstract:
A fast switching super-junction trench MOSFET is disclosed having a floating region formed underneath each gate trench and surrounding at least bottom of each the gate trench, which has a parasitic body diode with superior reverse recovery characteristics.
Information query
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