A method for producing a semiconductor device includes forming a fin-shaped silicon layer, a first insulating film around the fin-shaped silicon layer, a pillar-shaped silicon layer on the fin-shaped silicon layer, a gate electrode and a gate insulating film around the pillar-shaped silicon layer, a gate line connected to the gate electrode, a first diffusion layer in an upper portion of the pillar-shaped silicon layer, a second diffusion layer in a lower portion of the pillar-shaped silicon layer and an upper portion of the fin-shaped silicon layer, and a first silicide and a second silicide on the first diffusion layer and the second diffusion layer; an interlayer insulating film to expose an upper portion of the pillar-shaped silicon layer; etching the interlayer insulating film to form a contact hole; depositing a metal to form the first contact on the second silicide; and performing etching to form the metal wire.