Invention Grant
- Patent Title: Transistor with adjustable supply and/or threshold voltage
- Patent Title (中): 具有可调电源和/或阈值电压的晶体管
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Application No.: US13435070Application Date: 2012-03-30
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Publication No.: US08829620B2Publication Date: 2014-09-09
- Inventor: Philippe Galy , Jean Jimenez
- Applicant: Philippe Galy , Jean Jimenez
- Applicant Address: FR Montrouge
- Assignee: STMicroelectronics SA
- Current Assignee: STMicroelectronics SA
- Current Assignee Address: FR Montrouge
- Agency: Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
- Priority: FR1152823 20110401
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L29/78 ; H01L21/76 ; H01L27/088 ; H01L21/8234 ; H01L21/8238 ; H01L27/092
Abstract:
The first electrode of the transistor may include a first electrically conductive region provided within the semiconductor substrate. The second electrode may include a second electrically conductive region provided within the semiconductor substrate. The first and second regions may be separated by the substrate region, and the control electrode may include a third electrically conductive region provided within the substrate. The third electrically conductive region may be both separated from the substrate region by an insulating region and electrically coupled to the substrate region by a junction diode intended to be reverse-biased.
Public/Granted literature
- US20120248542A1 TRANSISTOR WITH ADJUSTABLE SUPPLY AND/OR THRESHOLD VOLTAGE Public/Granted day:2012-10-04
Information query
IPC分类:
