Invention Grant
- Patent Title: Pressure sensor and method for manufacturing pressure sensor
- Patent Title (中): 压力传感器及制造压力传感器的方法
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Application No.: US13699614Application Date: 2011-05-25
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Publication No.: US08829630B2Publication Date: 2014-09-09
- Inventor: Masahiro Sakuragi , Toma Fujita , Mizuho Okada
- Applicant: Masahiro Sakuragi , Toma Fujita , Mizuho Okada
- Applicant Address: JP Kyoto
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, P.C.
- Priority: JP2010-119704 20100525; JP2010-119705 20100525; JP2010-146360 20100628
- International Application: PCT/JP2011/061970 WO 20110525
- International Announcement: WO2011/148973 WO 20111201
- Main IPC: H01L29/84
- IPC: H01L29/84 ; B81C1/00 ; H01L21/762 ; G01L9/00

Abstract:
[Subject] To provide a pressure sensor capable of implementing cost reduction and miniaturization.[Solving Means] A pressure sensor 1 includes a silicon substrate 2 provided therein with a reference pressure chamber 8, a diaphragm 10, consisting of part of the silicon substrate 2, formed on a surface layer portion of the silicon substrate 2 to partition a reference pressure chamber 8, and an etching stop layer 9 formed on a lower surface of the diaphragm 10 facing the reference pressure chamber 8. A through-hole 11 communicating with the reference pressure chamber 8 is formed on the diaphragm 10, and a filler 13 is arranged in the through-hole 11.
Public/Granted literature
- US20130062713A1 PRESSURE SENSOR AND METHOD FOR MANUFACTURING PRESSURE SENSOR Public/Granted day:2013-03-14
Information query
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