Invention Grant
- Patent Title: Solid-state imaging device, manufacturing method thereof, electronic apparatus, and semiconductor device
- Patent Title (中): 固态成像装置，其制造方法，电子装置和半导体装置
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Application No.: US13367802Application Date: 2012-02-07
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Publication No.: US08829635B2Publication Date: 2014-09-09
- Inventor: Shunichi Shibuki
- Applicant: Shunichi Shibuki
- Applicant Address: JP
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP
- Agency: Sheridan Ross P.C.
- Priority: JP2011-038836 20110224
- Main IPC: H01L27/146
- IPC: H01L27/146
Abstract:
A solid-state imaging device includes a semiconductor layer where a pixel is formed in a pixel region and a semiconductor element is formed in a side opposite to where incident light is incident, a wiring layer provided on the semiconductor layer to cover the semiconductor element, a support substrate provided to oppose the wiring layer in a wiring layer surface opposite to the semiconductor layer, and an adhesion layer which adheres the wiring layer and the support substrate, where the wiring layer includes a pad electrode and an opening is formed so the pad electrode is exposed, a convex section is provided where the pad electrode is formed in at least a wiring layer surface opposing the support substrate or a support substrate surface opposing the wiring layer, and the adhesion layer is formed thinner at the formation portion of the pad electrode than a portion of the pixel region.
Public/Granted literature
- US20120217604A1 SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, ELECTRONIC APPARATUS, AND SEMICONDUCTOR DEVICE Public/Granted day:2012-08-30
Information query
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