Invention Grant
- Patent Title: Thermoelectric device using semiconductor technology
- Patent Title (中): 采用半导体技术的热电器件
-
Application No.: US13387821Application Date: 2010-07-26
-
Publication No.: US08829639B2Publication Date: 2014-09-09
- Inventor: Vincent Remondière , Guillaume Savelli , Marc Plissonnier , Denis Cottin
- Applicant: Vincent Remondière , Guillaume Savelli , Marc Plissonnier , Denis Cottin
- Applicant Address: FR Grenoble FR Paris
- Assignee: ST-Ericsson (Grenoble) SAS,Commissariat a l'Energie Atomique et aux Energies Alternatives
- Current Assignee: ST-Ericsson (Grenoble) SAS,Commissariat a l'Energie Atomique et aux Energies Alternatives
- Current Assignee Address: FR Grenoble FR Paris
- Agency: Oliff PLC
- Priority: FR0903721 20090729
- International Application: PCT/EP2010/060820 WO 20100726
- International Announcement: WO2011/012586 WO 20110203
- Main IPC: H01L31/058
- IPC: H01L31/058 ; H01L35/32 ; H01L35/28

Abstract:
An integrated thermoelectric device in semiconductor technology comprising a hot side arranged in proximity to a heat source, and a cold side, providing a signal according to the temperature difference between the hot and cold sides. The hot and cold sides are arranged in such a way that their temperatures tend to equal out when the temperature of the heat source varies, i.e. when the sensor is in poor operating conditions. A measuring circuit provides useful information according to a continuously variable portion of the signal from a time when the temperature of the heat source varies. If the temperature of the heat source ceases to vary, the temperatures of the hot and cold sides eventually equal out and the signal is annulled and ceases to vary. The distance between the hot and cold sides can be less than 100 μm.
Public/Granted literature
- US20120217608A1 THERMOELECTRIC DEVICE USING SEMICONDUCTOR TECHNOLOGY Public/Granted day:2012-08-30
Information query