Invention Grant
US08829649B2 Semiconductor device having a resistive element including a TaSiN layer
有权
具有包括TaSiN层的电阻元件的半导体器件
- Patent Title: Semiconductor device having a resistive element including a TaSiN layer
- Patent Title (中): 具有包括TaSiN层的电阻元件的半导体器件
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Application No.: US13670138Application Date: 2012-11-06
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Publication No.: US08829649B2Publication Date: 2014-09-09
- Inventor: Jun Kawahara , Naoya Inoue , Naoya Furutake , Yoshihiro Hayashi
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kawasaki-shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Miles & Stockbridge P.C.
- Priority: JP2011-243266 20111107
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119 ; H01L49/02 ; H01L27/08 ; H01L23/522 ; H01L27/06
Abstract:
A semiconductor device includes a first insulating layer (interlayer insulating layer), a resistive element that is disposed over the first insulating layer (interlayer insulating layer) and at least a surface layer of which is a TaSiN layer, and an interlayer insulating layer disposed over the first insulating layer (interlayer insulating layer) and the resistive element. Multiple via plugs having ends coupled to the TaSiN layer are disposed in the interlayer insulating layer.
Public/Granted literature
- US20130168817A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2013-07-04
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