Invention Grant
- Patent Title: Method of manufacturing nitride substrate, and nitride substrate
- Patent Title (中): 氮化物衬底和氮化物衬底的制造方法
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Application No.: US13061307Application Date: 2009-08-26
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Publication No.: US08829658B2Publication Date: 2014-09-09
- Inventor: Satoshi Arakawa , Michimasa Miyanaga , Takashi Sakurada , Yoshiyuki Yamamoto , Hideaki Nakahata
- Applicant: Satoshi Arakawa , Michimasa Miyanaga , Takashi Sakurada , Yoshiyuki Yamamoto , Hideaki Nakahata
- Applicant Address: JP Osaka-shi, Osaka
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka-shi, Osaka
- Agency: Drinker Biddle & Reath LLP
- Priority: JP2008-223809 20080901
- International Application: PCT/JP2009/064852 WO 20090826
- International Announcement: WO2010/024285 WO 20100304
- Main IPC: H01L29/04
- IPC: H01L29/04 ; C30B25/00 ; C30B29/40 ; C30B33/00

Abstract:
A method of manufacturing a nitride substrate includes the following steps. Firstly, a nitride crystal is grown. Then, the nitride substrate including a front surface is cut from the nitride crystal. In the step of cutting, the nitride substrate is cut such that an off angle formed between an axis orthogonal to the front surface and an m-axis or an a-axis is greater than zero. When the nitride crystal is grown in a c-axis direction, in the step of cutting, the nitride substrate is cut from the nitride crystal along a flat plane which passes through a front surface and a rear surface of the nitride crystal and does not pass through a line segment connecting a center of a radius of curvature of the front surface with a center of a radius of curvature of the rear surface of the nitride crystal.
Public/Granted literature
- US20110156213A1 METHOD OF MANUFACTURING NITRIDE SUBSTRATE, AND NITRIDE SUBSTRATE Public/Granted day:2011-06-30
Information query
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