Invention Grant
- Patent Title: Surface acoustic wave device
- Patent Title (中): 表面声波装置
-
Application No.: US13064490Application Date: 2011-03-29
-
Publication No.: US08829762B2Publication Date: 2014-09-09
- Inventor: Masahiro Nakano , Hirohiko Kamimura , Atsushi Iijima
- Applicant: Masahiro Nakano , Hirohiko Kamimura , Atsushi Iijima
- Applicant Address: CN Hong Kong
- Assignee: SAE Magnetics (H.K.) Ltd.
- Current Assignee: SAE Magnetics (H.K.) Ltd.
- Current Assignee Address: CN Hong Kong
- Agency: Nixon & Vanderhye PC
- Priority: JP2010-076633 20100330
- Main IPC: H01L41/047
- IPC: H01L41/047 ; H03H9/02

Abstract:
A surface acoustic wave device according to the present invention includes a piezoelectric monocrystal substrate 10, and an interdigital electrode 20 configured of a base electrode layer 21 formed on the piezoelectric monocrystal substrate, the base electrode layer 21 being made of a conductive material, and an aluminum-containing main electrode layer 22 formed on the base electrode layer by epitaxial growth. The electrode 20 has an upper layer 23 formed on the main electrode layer 22, and the upper layer 23 is made of a conductive material that is different from materials for the main electrode layer and the base electrode layer and has a larger specific gravity than aluminum.
Public/Granted literature
- US20110241480A1 Surface acoustic wave device Public/Granted day:2011-10-06
Information query
IPC分类: