Invention Grant
- Patent Title: White semiconductor light emitting device
- Patent Title (中): 白色半导体发光器件
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Application No.: US13571538Application Date: 2012-08-10
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Publication No.: US08829780B2Publication Date: 2014-09-09
- Inventor: Hiroaki Sakuta , Kazuhiko Kagawa , Yoshihito Satou , Shin Hiraoka
- Applicant: Hiroaki Sakuta , Kazuhiko Kagawa , Yoshihito Satou , Shin Hiraoka
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Chemical Corporation
- Current Assignee: Mitsubishi Chemical Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-145095 20100625; JP2010-179063 20100809; JP2010-279901 20101215
- Main IPC: H01J1/62
- IPC: H01J1/62 ; C09K11/77 ; C09K11/08 ; H01L25/075 ; H01L33/50

Abstract:
The invention aims at providing controllable parameters that are correlated with special color rendering index R9, and at providing a white-light emitting semiconductor device having a high R9 value obtained through optimization of such parameters. The white-light emitting semiconductor device is provided with a phosphor as a light-emitting material and with a light-emitting semiconductor element as an excitation source of the phosphor. The phosphor includes at least a green phosphor and a wide-band red phosphor. In the white light-emitting semiconductor device, an intensity at wavelength 640 nm of an emission spectrum which has been normalized with respect to luminous flux is 100-110% of the intensity at wavelength 640 nm of a spectrum of standard light for color rendering evaluation which has been normalized with respect to luminous flux.
Public/Granted literature
- US20120319565A1 WHITE SEMICONDUCTOR LIGHT EMITTING DEVICE Public/Granted day:2012-12-20
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