Invention Grant
US08829977B2 High frequency switch including diode-connected transistor connected to gate of transistor forming or blocking high frequency signal flow path
有权
高频开关包括二极管连接的晶体管连接到晶体管的栅极，形成或阻挡高频信号流动路径
- Patent Title: High frequency switch including diode-connected transistor connected to gate of transistor forming or blocking high frequency signal flow path
- Patent Title (中): 高频开关包括二极管连接的晶体管连接到晶体管的栅极，形成或阻挡高频信号流动路径
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Application No.: US13766461Application Date: 2013-02-13
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Publication No.: US08829977B2Publication Date: 2014-09-09
- Inventor: Chan Yong Jeong
- Applicant: Samsung Electro-Mechanics Co., Ltd.
- Applicant Address: KR Suwon Gyunggi-Do
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Suwon Gyunggi-Do
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2012-0134539 20121126
- Main IPC: H03K17/687
- IPC: H03K17/687
Abstract:
There is provided a high frequency switch including: a first signal transferring unit including a plurality of first switching devices and at least one first diode device individually connected to control terminals of the plurality of first switching devices to enable or block signal flow between a common port transmitting and receiving a first high frequency signal and a first port inputting and outputting the first high frequency signal; and a second signal transferring unit including a plurality of second switching devices and at least one second diode device individually connected to control terminals of the plurality of second switching devices to enable or block signal flow between the common port transmitting and receiving a second high frequency signal and a second port inputting and outputting the second high frequency signal.
Public/Granted literature
- US20140145782A1 HIGH FREQUENCY SWITCH Public/Granted day:2014-05-29
Information query
IPC分类:
