Invention Grant
US08829999B2 Low noise amplifiers including group III nitride based high electron mobility transistors
有权
低噪声放大器，包括III族氮化物基高电子迁移率晶体管
- Patent Title: Low noise amplifiers including group III nitride based high electron mobility transistors
- Patent Title (中): 低噪声放大器，包括III族氮化物基高电子迁移率晶体管
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Application No.: US13110584Application Date: 2011-05-18
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Publication No.: US08829999B2Publication Date: 2014-09-09
- Inventor: Jeremy Fisher
- Applicant: Jeremy Fisher
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel Sibley & bSajovec, P.A.
- Main IPC: H03F1/14
- IPC: H03F1/14 ; H03F3/68 ; H01L27/085 ; H01L29/40 ; H01L29/778 ; H01L27/06 ; H03F3/195 ; H01L29/423 ; H01L29/20
Abstract:
A low noise amplifier includes a first Group III-nitride based transistor and a second Group III-nitride based transistor coupled to the first Group III-nitride based transistor. The first Group III-nitride based transistor is configured to provide a first stage of amplification to an input signal, and the second Group III-nitride based transistor is configured to provide a second stage of amplification to the input signal.
Public/Granted literature
- US20120194276A1 Low Noise Amplifiers Including Group III Nitride Based High Electron Mobility Transistors Public/Granted day:2012-08-02
Information query
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