Invention Grant
- Patent Title: High voltage DC switchyard with semiconductor switches
- Patent Title (中): 具有半导体开关的高压直流开关站
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Application No.: US13697264Application Date: 2010-05-11
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Publication No.: US08830636B2Publication Date: 2014-09-09
- Inventor: Gunnar Asplund , Jurgen Häfner
- Applicant: Gunnar Asplund , Jurgen Häfner
- Applicant Address: CH Zürich
- Assignee: ABB Technology AG
- Current Assignee: ABB Technology AG
- Current Assignee Address: CH Zürich
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- International Application: PCT/EP2010/056464 WO 20100511
- International Announcement: WO2011/141053 WO 20111117
- Main IPC: H02H3/00
- IPC: H02H3/00 ; H02H7/26 ; H02J3/36 ; H02B1/20
Abstract:
A high voltage DC switchyard comprises at least one busbar, at lest two DC lines connected to said at least one busbar through DC breakers comprising a section of at least one semiconductor device of turn-off type and rectifying member in anti-parallel therewith. At least one said DC line is connected to at least one said busbar through a unidirectional said DC breaker, i.e. a DC breaker that may only block current therethrough in one direction.
Public/Granted literature
- US20130050888A1 HIGH VOLTAGE DC SWITCHYARD WITH SEMICONDUCTOR SWITCHES Public/Granted day:2013-02-28
Information query
