Invention Grant
- Patent Title: ESD protection against charge coupling
- Patent Title (中): 防止电荷耦合的ESD保护
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Application No.: US13348949Application Date: 2012-01-12
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Publication No.: US08830639B2Publication Date: 2014-09-09
- Inventor: Christopher A. Bennett , Taeghyun Kang
- Applicant: Christopher A. Bennett , Taeghyun Kang
- Applicant Address: US CA San Jose
- Assignee: Fairchild Semiconductor Corporation
- Current Assignee: Fairchild Semiconductor Corporation
- Current Assignee Address: US CA San Jose
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H02H9/00
- IPC: H02H9/00 ; H02H9/04

Abstract:
This document discusses among other things apparatus and methods for reducing ESD damage to buffer circuits. In an example, an output buffer can include an output, a first transistor configured to couple the output to a high logic supply rail, a second transistor configured to couple the output node to a low logic supply rail, pre-driver logic configured to drive a gate of the first transistor and a gate of the second transistor, and a first resistor configured to reduce electrostatic discharge (ESD) induced current between the first transistor and the pre-driver logic.
Public/Granted literature
- US20120182663A1 ESD PROTECTION AGAINST CHARGE COUPLING Public/Granted day:2012-07-19
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