Invention Grant
US08830736B2 Initialization method of a perpendicular magnetic random access memory (MRAM) device with a stable reference cell
有权
具有稳定参考单元的垂直磁随机存取存储器（MRAM）器件的初始化方法
- Patent Title: Initialization method of a perpendicular magnetic random access memory (MRAM) device with a stable reference cell
- Patent Title (中): 具有稳定参考单元的垂直磁随机存取存储器（MRAM）器件的初始化方法
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Application No.: US13360553Application Date: 2012-01-27
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Publication No.: US08830736B2Publication Date: 2014-09-09
- Inventor: Yuchen Zhou , Yiming Huai
- Applicant: Yuchen Zhou , Yiming Huai
- Applicant Address: US CA Fremont
- Assignee: Avalanche Technology, Inc.
- Current Assignee: Avalanche Technology, Inc.
- Current Assignee Address: US CA Fremont
- Agent Maryam Imam; Bing K Yen
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/16 ; G11C11/56
Abstract:
A method of initializing a magnetic random access memory (MRAM) element that is configured to store a state when electric current flows therethrough is disclosed. The MRAM element includes a first magnetic tunnel junction (MTJ) for storing a data bit and a second MTJ for storing a reference bit. The direction of magnetization of the FL is determinative of the data bit stored in the at least one MTJ and each MTJ further includes a magnetic reference layer (RL) having a magnetization with a direction that is perpendicular to the film plane, and a magnetic pinned layer (PL) having a magnetization with a direction that is perpendicular to the film plane. The direction of magnetization of the RL and the PL are anti-parallel relative to each other in the first MTJ. The direction of magnetization of the FL, the RL and the PL are parallel relative to each other in the second MTJ for storing reference bit.
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