Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US13424812Application Date: 2012-03-20
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Publication No.: US08830751B2Publication Date: 2014-09-09
- Inventor: Hiroshi Maejima , Koji Hosono
- Applicant: Hiroshi Maejima , Koji Hosono
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-195018 20110907
- Main IPC: G11C11/34
- IPC: G11C11/34 ; H01L27/088 ; G11C16/10 ; G11C16/04 ; G11C16/06 ; G11C16/08 ; G11C16/34 ; H01L27/115 ; H01L21/8234

Abstract:
According to one embodiment, a semiconductor memory device includes a memory cells, a selection transistor, a memory string, a block, and a transfer circuit. The memory cells are stacked on a semiconductor substrate. In the memory string, the memory cells and the selection transistor are connected in series. The block includes a plurality of memory strings. In data write and read, the transfer circuit transfers a positive voltage to a select gate line associated with a selected memory string in a selected block, and a negative voltage to a select gate line associated with an unselected memory string in the selected block, and to a select gate line associated with an unselected block.
Public/Granted literature
- US20130058165A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2013-03-07
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