Invention Grant
US08830756B2 Dynamic detection method for latent slow-to-erase bit for high performance and high reliability flash memory
有权
用于高性能和高可靠性闪存的潜在慢速擦除位的动态检测方法
- Patent Title: Dynamic detection method for latent slow-to-erase bit for high performance and high reliability flash memory
- Patent Title (中): 用于高性能和高可靠性闪存的潜在慢速擦除位的动态检测方法
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Application No.: US13747504Application Date: 2013-01-23
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Publication No.: US08830756B2Publication Date: 2014-09-09
- Inventor: Fuchen Mu , Chen He
- Applicant: Fuchen Mu , Chen He
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/34

Abstract:
A method and apparatus for detecting a latent slow bit (e.g., a latent slow-to-erase bit) in a non-volatile memory (NVM) is disclosed. A maximum number of soft program pulses among addresses during an erase cycle is counted. In accordance with at least one embodiment, a number of erase pulses during the erase cycle is counted. In accordance with various embodiments, determinations are made as to whether the maximum number of the soft program pulses has increased at a rate of at least a predetermined minimum rate comparing to a previous erase cycle, whether the maximum number of the soft program pulses has exceeded a predetermined threshold, whether the number of erase pulses has increased comparing to a previous erase cycle, or combinations thereof. In response to such determinations, the NVM is either passed or failed on the basis of the absence or presence of a slow bit in the NVM.
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