Invention Grant
- Patent Title: Semiconductor storage device
- Patent Title (中): 半导体存储设备
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Application No.: US13235643Application Date: 2011-09-19
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Publication No.: US08830758B2Publication Date: 2014-09-09
- Inventor: Seiro Imai , Kazuhiko Miki
- Applicant: Seiro Imai , Kazuhiko Miki
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: White & Case LLP
- Priority: JP2011-049550 20110307
- Main IPC: G11C7/06
- IPC: G11C7/06 ; G11C7/08 ; G11C7/14 ; G11C7/22 ; G11C16/26 ; G11C16/28

Abstract:
According to one embodiment, a semiconductor storage device includes cells, and a sense amplifier. Each of the cells is connected to a bit line. The sense amplifier reads out data. The sense amplifier includes a first transistor to third transistor, and a switch. The first transistor has one end of a current path, the other end, and a gate. The second transistor has one end, and the other end. The second transistor has one of a first and a second supply ability. The third transistor has one end, and the other end. The third transistor has one of a third and a fourth supply ability. The switch grounds the second and the third transistors. The sense amplifier turns off the first transistor after transferring the data to an outside, and supplies the second signal to the switch to set gates of the second transistor and third transistor to ground.
Public/Granted literature
- US20120230131A1 SEMICONDUCTOR STORAGE DEVICE Public/Granted day:2012-09-13
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