A fuse-based memory includes a plurality of bit lines. Each bit lines couples to a corresponding plurality of fuses. The fuses couple to ground through corresponding access transistors. The memory is configured to precharge an accessed one of the bit lines and a reference one of the bit lines using a low voltage supply. In contrast, a resulting voltage difference between the accessed bit line and the reference bit line is sensed using a sense amplifier powered by a high voltage supply, wherein a high voltage supplied by the high power supply is greater than a low voltage supplied by the low voltage supply.